2N2222A TIN/LEAD Central Semiconductor
auf Bestellung 3823 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.03 EUR |
| 10+ | 3.96 EUR |
| 100+ | 3.17 EUR |
| 500+ | 2.64 EUR |
| 1000+ | 2.52 EUR |
| 2000+ | 2.15 EUR |
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Technische Details 2N2222A TIN/LEAD Central Semiconductor
Description: 40V 800MA 500MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 300MHz, Supplier Device Package: TO-18, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 500 mW.
Weitere Produktangebote 2N2222A TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2N2222A TIN/LEAD | Hersteller : Central Semiconductor |
 Trans GP BJT NPN 40V 0.8A 500mW 3-Pin TO-18 Box |
Produkt ist nicht verfügbar |
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2N2222A TIN/LEAD | Hersteller : Central Semiconductor Corp |
Description: 40V 800MA 500MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |