2N2222AE3 Microchip Technology
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 1020 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.72 EUR |
| 100+ | 6.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N2222AE3 Microchip Technology
Description: TRANS NPN 50V 0.8A TO-18, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-18 (TO-206AA), Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW.
Weitere Produktangebote 2N2222AE3 nach Preis ab 6.34 EUR bis 8.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2N2222AE3 | Hersteller : Microchip Technology |
Bipolar Transistors - BJT 40V 800mA 500mW Lead-Free Small-Signal BJT THT |
auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
| 2N2222AE3 | Hersteller : Microchip Technology |
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 |
auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
| 2N2222AE3 | Hersteller : Microchip Technology |
NPN Silicon Switching Transistor |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||
| 2N2222AE3 | Hersteller : Microchip Technology |
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||
| 2N2222AE3 | Hersteller : Microchip Technology |
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||
| 2N2222AE3 | Hersteller : Microchip Technology |
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 |
Produkt ist nicht verfügbar |

