2N2222AE4 Microchip Technology
Hersteller: Microchip TechnologyBipolar Transistors - BJT 40V 800mA 500mW Lead-Free Small-Signal BJT THT
auf Bestellung 159 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.02 EUR |
| 100+ | 5.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N2222AE4 Microchip Technology
Description: TRANS NPN 50V 0.8A TO-18, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-18 (TO-206AA), Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW.
Weitere Produktangebote 2N2222AE4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 2N2222AE4 | Hersteller : Microchip Technology |
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 |
Produkt ist nicht verfügbar |
||
 |
2N2222AE4 | Hersteller : Microchip Technology |
Description: TRANS NPN 50V 0.8A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |