2N2222AUBC Microchip Technology
| Anzahl | Preis |
|---|---|
| 2+ | 112.94 EUR |
| 5+ | 74.27 EUR |
| 10+ | 65.82 EUR |
| 25+ | 43.31 EUR |
| 50+ | 40.27 EUR |
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Technische Details 2N2222AUBC Microchip Technology
Description: TRANS NPN 50V 0.8A UBC, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: UBC, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW.
Weitere Produktangebote 2N2222AUBC nach Preis ab 37.65 EUR bis 56.58 EUR
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| 2N2222AUBC | Hersteller : Microchip Technology |
 Bipolar Transistors - BJT 40V 800mA 500mW 3 Pin CER Small-Signal BJT |
auf Bestellung 154 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2222AUBC | Hersteller : Microchip Technology |
Description: TRANS NPN 50V 0.8A UBC Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UBC Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
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