Technische Details 2N2369A TIN/LEAD Central Semiconductor
Description: 15V 200MA 360MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 400nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V, Frequency - Transition: 500MHz, Supplier Device Package: TO-18, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 15 V, Power - Max: 360 mW.
Weitere Produktangebote 2N2369A TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| 2N2369A TIN/LEAD | Central Semiconductor Corp |
Description: 15V 200MA 360MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Frequency - Transition: 500MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 360 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
2N2369A TIN/LEAD | Central Semiconductor |
 Bipolar Transistors - BJT 40Vcbo 40Vces 15V 4.5Vebo 200mA 500mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N2369A TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 15V 200MA 360MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 500MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Description: 15V 200MA 360MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 500MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N2369A TIN/LEAD |
|
Hersteller: Central Semiconductor
Bipolar Transistors - BJT 40Vcbo 40Vces 15V 4.5Vebo 200mA 500mA
Bipolar Transistors - BJT 40Vcbo 40Vces 15V 4.5Vebo 200mA 500mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH