2N2405 TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 90V 1A 1W TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 150mA, 10V
Frequency - Transition: 120MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 1 W
Description: 90V 1A 1W TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 150mA, 10V
Frequency - Transition: 120MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 1 W
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Technische Details 2N2405 TIN/LEAD Central Semiconductor Corp
Description: 90V 1A 1W TH TRANSISTOR-SMALL SI, Packaging: Box, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 150mA, 10V, Frequency - Transition: 120MHz, Supplier Device Package: TO-39, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 90 V, Power - Max: 1 W.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2N2405 TIN/LEAD | Hersteller : Central Semiconductor |
 Bipolar Transistors - BJT NPN 120Vcbo 90Vceo 7.0Vebo 15pF |
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