2N2907 PBFREE

2N2907 PBFREE Central Semiconductor


2N2906.PDF Hersteller: Central Semiconductor
Bipolar Transistors - BJT PNP Silicon
auf Bestellung 2428 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.69 EUR
12+ 4.71 EUR
100+ 3.74 EUR
250+ 3.46 EUR
500+ 3.15 EUR
1000+ 2.68 EUR
2000+ 2.63 EUR
Mindestbestellmenge: 10
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Technische Details 2N2907 PBFREE Central Semiconductor

Description: TRANS PNP 40V 0.6A TO18, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 20nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: TO-18, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 1.8 W.

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2N2907 PBFREE 2N2907 PBFREE Hersteller : Central Semiconductor 2500339836309919get_document.phpcmp1mergetypepdmergepathpdpdf_idlssgp056.pdf Trans GP BJT PNP 40V 0.6A 1800mW 3-Pin TO-18
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2N2907 PBFREE Hersteller : Central Semiconductor Corp 2N2906.PDF Description: TRANS PNP 40V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.8 W
Produkt ist nicht verfügbar