2N2907 PBFREE Central Semiconductor


2N2906.pdf
Hersteller: Central Semiconductor
Bipolar Transistors - BJT PNP Silicon
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Lieferzeit 10-14 Tag (e)
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1+5.9 EUR
10+3.83 EUR
100+2.81 EUR
500+2.37 EUR
1000+2.01 EUR
2000+1.86 EUR
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Technische Details 2N2907 PBFREE Central Semiconductor

Description: TRANS PNP 40V 0.6A TO-18, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 20nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: TO-18, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 1.8 W.

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2N2907 PBFREE 2N2907 PBFREE Central Semiconductor 2500339836309919get_document.phpcmp1mergetypepdmergepathpdpdf_idlssgp056.pdf Trans GP BJT PNP 40V 0.6A 1800mW 3-Pin TO-18
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2N2907 PBFREE 2N2907 PBFREE Central Semiconductor Corp 2N2906.PDF Description: TRANS PNP 40V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.8 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N2907 PBFREE 2500339836309919get_document.phpcmp1mergetypepdmergepathpdpdf_idlssgp056.pdf
Hersteller: Central Semiconductor
Trans GP BJT PNP 40V 0.6A 1800mW 3-Pin TO-18
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N2907 PBFREE 2N2906.PDF
Hersteller: Central Semiconductor Corp
Description: TRANS PNP 40V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.8 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH