2N2907A TIN/LEAD Central Semiconductor
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 3.14 EUR |
| 4000+ | 2.62 EUR |
| 6000+ | 2.34 EUR |
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Technische Details 2N2907A TIN/LEAD Central Semiconductor
Description: 60V 600MA 400MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: TO-18, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 400 mW.
Weitere Produktangebote 2N2907A TIN/LEAD nach Preis ab 2.36 EUR bis 3.18 EUR
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2N2907A TIN/LEAD | Hersteller : Central Semiconductor |
 Trans GP BJT PNP 60V 0.6A 400mW 3-Pin TO-18 Box |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N2907A TIN/LEAD | Hersteller : Central Semiconductor Corp |
Description: 60V 600MA 400MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 400 mW |
Produkt ist nicht verfügbar |
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2N2907A TIN/LEAD | Hersteller : Central Semiconductor |
Bipolar Transistors - BJT 60Vcbo 60Vceo 5V 0.5A 400mW |
Produkt ist nicht verfügbar |