2N3019 PBFREE

2N3019 PBFREE Central Semiconductor


2N3019%20SERIES.PDF Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN Gen Pur SS
auf Bestellung 4255 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+5.15 EUR
12+ 4.52 EUR
100+ 3.69 EUR
250+ 3.56 EUR
500+ 2.99 EUR
1000+ 2.81 EUR
2500+ 2.68 EUR
Mindestbestellmenge: 11
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Technische Details 2N3019 PBFREE Central Semiconductor

Description: TRANS NPN 80V 1A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 100MHz, Supplier Device Package: TO-39, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 800 mW.

Weitere Produktangebote 2N3019 PBFREE

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2N3019 PBFREE 2N3019 PBFREE Hersteller : Central Semiconductor 2n301920series.pdf Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39 Box
Produkt ist nicht verfügbar
2N3019 PBFREE 2N3019 PBFREE Hersteller : Central Semiconductor 2n301920series.pdf Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39 Box
Produkt ist nicht verfügbar
2N3019 PBFREE Hersteller : Central Semiconductor 2N3019%20SERIES.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 800mW; TO39
Mounting: THT
Case: TO39
Polarisation: bipolar
Collector-emitter voltage: 80V
Kind of package: bulk
Frequency: 100MHz
Current gain: 15...300
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.8W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
2N3019 PBFREE 2N3019 PBFREE Hersteller : Central Semiconductor Corp 2N3019%20SERIES.PDF Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
2N3019 PBFREE Hersteller : Central Semiconductor 2N3019%20SERIES.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 800mW; TO39
Mounting: THT
Case: TO39
Polarisation: bipolar
Collector-emitter voltage: 80V
Kind of package: bulk
Frequency: 100MHz
Current gain: 15...300
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.8W
Produkt ist nicht verfügbar