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2N3440 TIN/LEAD

2N3440 TIN/LEAD Central Semiconductor


2n3439.pdf Hersteller: Central Semiconductor
Trans GP BJT NPN 250V 1A 1000mW 3-Pin TO-39
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Technische Details 2N3440 TIN/LEAD Central Semiconductor

Description: 250V 1A 1W TH TRANSISTOR-SMALL S, Packaging: Box, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Frequency - Transition: 15MHz, Supplier Device Package: TO-39, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 250 V, Power - Max: 1 W.

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2N3440 TIN/LEAD 2N3440 TIN/LEAD Hersteller : Central Semiconductor Corp 2N3439.PDF Description: 250V 1A 1W TH TRANSISTOR-SMALL S
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 1 W
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2N3440 TIN/LEAD 2N3440 TIN/LEAD Hersteller : Central Semiconductor LSSGP061-1652480.pdf Bipolar Transistors - BJT NPN 300Vcbo 250Vceo 7.0Vebo 10pF
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