Technische Details 2N3440 TIN/LEAD Central Semiconductor
Description: 250V 1A 1W TH TRANSISTOR-SMALL S, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 250 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: TO-39, Frequency - Transition: 15MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Current - Collector Cutoff (Max): 50µA, Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Box.
Weitere Produktangebote 2N3440 TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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2N3440 TIN/LEAD | Central Semiconductor Corp |
 Description: 250V 1A 1W TH TRANSISTOR-SMALL SPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 250 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-39 Frequency - Transition: 15MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector Cutoff (Max): 50µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Box |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
2N3440 TIN/LEAD | Central Semiconductor |
Bipolar Transistors - BJT NPN 300Vcbo 250Vceo 7.0Vebo 10pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N3440 TIN/LEAD |
|
Hersteller: Central Semiconductor Corp
Description: 250V 1A 1W TH TRANSISTOR-SMALL S
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-39
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Box
Description: 250V 1A 1W TH TRANSISTOR-SMALL S
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-39
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Box
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N3440 TIN/LEAD |
|
Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN 300Vcbo 250Vceo 7.0Vebo 10pF
Bipolar Transistors - BJT NPN 300Vcbo 250Vceo 7.0Vebo 10pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH