2N3501 TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 150V 300MA 1W TH TRANSISTOR-SMAL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Description: 150V 300MA 1W TH TRANSISTOR-SMAL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
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Technische Details 2N3501 TIN/LEAD Central Semiconductor Corp
Description: 150V 300MA 1W TH TRANSISTOR-SMAL, Packaging: Box, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 150MHz, Supplier Device Package: TO-39, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 1 W.
Weitere Produktangebote 2N3501 TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2N3501 TIN/LEAD | Hersteller : Central Semiconductor |
 Bipolar Transistors - BJT NPN 150Vcbo 150Vceo 6.0Vebo 300mA 1.0W |
Produkt ist nicht verfügbar |