2N3700UB/TR

2N3700UB/TR Microchip Technology


lds-0185.pdf Hersteller: Microchip Technology
Trans GP BJT NPN 80V 1A 500mW 4-Pin Case UB T/R
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Technische Details 2N3700UB/TR Microchip Technology

Description: TRANS NPN 80V 1A UB, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V, Supplier Device Package: UB, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 500 mW.

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2N3700UB/TR 2N3700UB/TR Hersteller : Microchip Technology lds-0185.pdf Trans GP BJT NPN 80V 1A 500mW 4-Pin Case UB T/R
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2N3700UB/TR 2N3700UB/TR Hersteller : Microchip Technology Description: TRANS NPN 80V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
2N3700UB/TR 2N3700UB/TR Hersteller : Microchip Technology LDS_0185_3-1592460.pdf Bipolar Transistors - BJT Small-Signal BJT
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