Technische Details 2N3739 Microsemi
Description: TRANS NPN 300V 1A TO66, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 25mA, 250mA, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 250mA, 10V, Supplier Device Package: TO-66 (TO-213AA), Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 20 W.
Weitere Produktangebote 2N3739
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2N3739 | Hersteller : MOTOROLA |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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2N3739 | Hersteller : Microchip Technology |
 Trans GP BJT NPN 300V 1A 20000mW 3-Pin(2+Tab) TO-66 Tray |
Produkt ist nicht verfügbar |
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2N3739 | Hersteller : Microchip Technology |
Trans GP BJT NPN 300V 1A 20000mW 3-Pin(2+Tab) TO-66 Tray |
Produkt ist nicht verfügbar |
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2N3739 | Hersteller : Microchip Technology |
Description: TRANS NPN 300V 1A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 25mA, 250mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 250mA, 10V Supplier Device Package: TO-66 (TO-213AA) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 20 W |
Produkt ist nicht verfügbar |