2N3771G Sanyo
Hersteller: Sanyo
Description: HIGH POWER NPN SILICON POWER TRA
Packaging: Bulk
Part Status: Active
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V
Frequency - Transition: 200kHz
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 W
Description: HIGH POWER NPN SILICON POWER TRA
Packaging: Bulk
Part Status: Active
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V
Frequency - Transition: 200kHz
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 W
auf Bestellung 10400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
73+ | 6.84 EUR |
Produktrezensionen
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Technische Details 2N3771G Sanyo
Description: HIGH POWER NPN SILICON POWER TRA, Packaging: Bulk, Part Status: Active, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A, Current - Collector Cutoff (Max): 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V, Frequency - Transition: 200kHz, Supplier Device Package: TO-204AA (TO-3), Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 150 W.
Weitere Produktangebote 2N3771G
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Verfügbarkeit |
Preis ohne MwSt |
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2N3771G | Hersteller : ON Semiconductor | Trans GP BJT NPN 40V 30A 150000mW 3-Pin(2+Tab) TO-3 Tray |
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2N3771G | Hersteller : ONSEMI |
Description: ONSEMI - 2N3771G - Bipolarer Einzeltransistor (BJT), NPN, 40 V, 30 A, 150 W, TO-204, Durchsteckmontage Transistormontage: Durchsteckmontage DC-Stromverstärkung (hFE), min.: 5 DC-Stromverstärkung hFE: 5 Qualifikation: - Dauer-Kollektorstrom: 30 Verlustleistung: 150 Bauform - Transistor: TO-204 Anzahl der Pins: 2 Produktpalette: 2NXXXX Kollektor-Emitter-Spannung, max.: 40 Wandlerpolarität: NPN Übergangsfrequenz: 200 Betriebstemperatur, max.: 200 SVHC: Lead (19-Jan-2021) |
Produkt ist nicht verfügbar |
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2N3771G | Hersteller : onsemi | Bipolar Transistors - BJT 30A 40V 150W NPN |
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2N3771G | Hersteller : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 50V; 30A; 150W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 30A Power dissipation: 150W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 200kHz |
Produkt ist nicht verfügbar |