2N3819 APM TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 8V 10MA 360MW TH JFET N CHANNEL
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Drain to Source Voltage (Vdss): 25 V
Power - Max: 360 mW
Voltage - Cutoff (VGS off) @ Id: 8 V @ 2 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Description: 8V 10MA 360MW TH JFET N CHANNEL
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Drain to Source Voltage (Vdss): 25 V
Power - Max: 360 mW
Voltage - Cutoff (VGS off) @ Id: 8 V @ 2 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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Technische Details 2N3819 APM TIN/LEAD Central Semiconductor Corp
Description: 8V 10MA 360MW TH JFET N CHANNEL, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -65°C ~ 150°C (TJ), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V, Voltage - Breakdown (V(BR)GSS): 25 V, Supplier Device Package: TO-92-3, Drain to Source Voltage (Vdss): 25 V, Power - Max: 360 mW, Voltage - Cutoff (VGS off) @ Id: 8 V @ 2 nA, Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V.
Weitere Produktangebote 2N3819 APM TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2N3819 APM TIN/LEAD | Hersteller : Central Semiconductor | JFETs 8V,10mA,360mW Through-Hole JFET N Channel |
Produkt ist nicht verfügbar |