Produkte > CENTRAL SEMICONDUCTOR > 2N3904 TIN/LEAD
2N3904 TIN/LEAD

2N3904 TIN/LEAD Central Semiconductor

2n3903.pdf
Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN 60Vcbo 40Vceo 6.0Vebo 200mA 625mW
auf Bestellung 7885 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.48 EUR
10+1.02 EUR
100+0.64 EUR
500+0.4 EUR
1000+0.3 EUR
2500+0.25 EUR
5000+0.23 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 2N3904 TIN/LEAD Central Semiconductor

Description: 40V 200MA 625MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 625 mW.

Weitere Produktangebote 2N3904 TIN/LEAD

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
2N3904 TIN/LEAD Central Semiconductor Corp Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N3904 TIN/LEAD
Hersteller: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH