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2N4036 TIN/LEAD

2N4036 TIN/LEAD Central Semiconductor


2n4036.pdf Hersteller: Central Semiconductor
Trans GP BJT PNP 65V 1A 1000mW 3-Pin TO-39 Box
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Technische Details 2N4036 TIN/LEAD Central Semiconductor

Description: 65V 1A 1W TH TRANSISTOR-SMALL SI, Packaging: Box, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Frequency - Transition: 60MHz, Supplier Device Package: TO-39, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 65 V, Power - Max: 1 W.

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2N4036 TIN/LEAD 2N4036 TIN/LEAD Hersteller : Central Semiconductor Corp Description: 65V 1A 1W TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 1 W
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2N4036 TIN/LEAD 2N4036 TIN/LEAD Hersteller : Central Semiconductor 2n4036-1652442.pdf Bipolar Transistors - BJT PNP 90Vcbo 65Vceo 7.0Vebo 1.0A 5.0W
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