2N4123 TIN/LEAD Central Semiconductor
| Anzahl | Preis |
|---|---|
| 3+ | 1.14 EUR |
| 10+ | 0.7 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.32 EUR |
| 2500+ | 0.27 EUR |
| 5000+ | 0.24 EUR |
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Technische Details 2N4123 TIN/LEAD Central Semiconductor
Description: 30V 200MA 625MW TH TRANSISTOR-SM, Power - Max: 1.5 W, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 200 mA, Supplier Device Package: TO-92-3, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Box.
Weitere Produktangebote 2N4123 TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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2N4123 TIN/LEAD | Central Semiconductor Corp |
Description: 30V 200MA 625MW TH TRANSISTOR-SM Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 200 mA Supplier Device Package: TO-92-3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Box |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N4123 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH