2N4123 TIN/LEAD Central Semiconductor
auf Bestellung 4986 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.14 EUR |
| 10+ | 0.7 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.32 EUR |
| 2500+ | 0.27 EUR |
| 5000+ | 0.24 EUR |
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Technische Details 2N4123 TIN/LEAD Central Semiconductor
Description: 30V 200MA 625MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V, Frequency - Transition: 250MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 1.5 W.
Weitere Produktangebote 2N4123 TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2N4123 TIN/LEAD | Hersteller : Central Semiconductor Corp |
Description: 30V 200MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1.5 W |
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