2N4391 TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 4V 10V 50MA 1.8W TH JFET N CHANN
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Current Drain (Id) - Max: 100 pA
Supplier Device Package: TO-18
Power - Max: 1.8 W
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 150 mA @ 20 V
Description: 4V 10V 50MA 1.8W TH JFET N CHANN
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Current Drain (Id) - Max: 100 pA
Supplier Device Package: TO-18
Power - Max: 1.8 W
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 150 mA @ 20 V
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Technische Details 2N4391 TIN/LEAD Central Semiconductor Corp
Description: 4V 10V 50MA 1.8W TH JFET N CHANN, Packaging: Box, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 175°C (TJ), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V, Voltage - Breakdown (V(BR)GSS): 40 V, Current Drain (Id) - Max: 100 pA, Supplier Device Package: TO-18, Power - Max: 1.8 W, Resistance - RDS(On): 30 Ohms, Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA, Current - Drain (Idss) @ Vds (Vgs=0): 150 mA @ 20 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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2N4391 TIN/LEAD | Hersteller : Central Semiconductor |
 JFETs N-Ch 40Vgd 40Vgs 50mA 1.8W JFET |
Produkt ist nicht verfügbar |