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2N4401 TIN/LEAD Central Semiconductor


2n4400.pdf Hersteller: Central Semiconductor
NPN Silicon Transistor
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Technische Details 2N4401 TIN/LEAD Central Semiconductor

Description: 40V 600MA 625MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Supplier Device Package: TO-92-3, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V, Frequency - Transition: 250MHz, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 625 mW.

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2N4401 TIN/LEAD 2N4401 TIN/LEAD Hersteller : Central Semiconductor Corp Description: 40V 600MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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2N4401 TIN/LEAD 2N4401 TIN/LEAD Hersteller : Central Semiconductor 2n4400-1652613.pdf Bipolar Transistors - BJT NPN 60Vcbo 40Vceo 6.0Vebo 600mA 625mW
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