2N4449UB/TR Microchip Technology
Hersteller: Microchip TechnologyDescription: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 400 mW
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 38.85 EUR |
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Technische Details 2N4449UB/TR Microchip Technology
Description: SMALL-SIGNAL BJT, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C, Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 400nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V, Supplier Device Package: UB, Voltage - Collector Emitter Breakdown (Max): 15 V, Power - Max: 400 mW.
Weitere Produktangebote 2N4449UB/TR nach Preis ab 41.84 EUR bis 41.84 EUR
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2N4449UB/TR | Hersteller : Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: UB Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 400 mW |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N4449UB/TR | Hersteller : Microchip Technology |
Bipolar Transistors - BJT Small-Signal BJT |
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