2N5059 TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 250V 150MA 1W TH TRANSISTOR-SMAL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 25V
Frequency - Transition: 160MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 5 W
Description: 250V 150MA 1W TH TRANSISTOR-SMAL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 25V
Frequency - Transition: 160MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 5 W
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Technische Details 2N5059 TIN/LEAD Central Semiconductor Corp
Description: 250V 150MA 1W TH TRANSISTOR-SMAL, Packaging: Box, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 25V, Frequency - Transition: 160MHz, Supplier Device Package: TO-39, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 250 V, Power - Max: 5 W.
Weitere Produktangebote 2N5059 TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2N5059 TIN/LEAD | Hersteller : Central Semiconductor |
 Bipolar Transistors - BJT NPN 250Vcbo 250Vceo 6.0Vebo 150mA 1.0W |
Produkt ist nicht verfügbar |