
2N5089 TIN/LEAD Central Semiconductor
auf Bestellung 2631 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
4+ | 0.89 EUR |
10+ | 0.77 EUR |
100+ | 0.57 EUR |
500+ | 0.45 EUR |
1000+ | 0.35 EUR |
2500+ | 0.32 EUR |
10000+ | 0.28 EUR |
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Technische Details 2N5089 TIN/LEAD Central Semiconductor
Description: 25V 50MA 625MW TH TRANSISTOR-SMA, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 1mA, 5V, Frequency - Transition: 50MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 625 mW.
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2N5089 TIN/LEAD | Hersteller : Central Semiconductor Corp |
Description: 25V 50MA 625MW TH TRANSISTOR-SMA Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 1mA, 5V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
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