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2N5089 TIN/LEAD

2N5089 TIN/LEAD Central Semiconductor


2n5088_2520series-1130989.pdf Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN 30Vcbo 25Vceo 4.5Vebo 50mA 625mW
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Technische Details 2N5089 TIN/LEAD Central Semiconductor

Description: 25V 50MA 625MW TH TRANSISTOR-SMA, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 1mA, 5V, Frequency - Transition: 50MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 625 mW.

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2N5089 TIN/LEAD 2N5089 TIN/LEAD Hersteller : Central Semiconductor Corp Description: 25V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 1mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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