2N5210 TRA TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N5210 TRA TIN/LEAD Central Semiconductor Corp
Description: 50V 50MA 350MW TH TRANSISTOR-SMA, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V, Frequency - Transition: 30MHz, Supplier Device Package: TO-92, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1 W.
Weitere Produktangebote 2N5210 TRA TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
2N5210 TRA TIN/LEAD | Hersteller : Central Semiconductor | Bipolar Transistors - BJT NPN 50Vceo 50Vcbo 4.5Vebo 50mA 350mW |
Produkt ist nicht verfügbar |