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2N5306 TIN/LEAD

2N5306 TIN/LEAD Central Semiconductor Corp

2N5306_5308.PDF Hersteller: Central Semiconductor Corp
Description: TRANS NPN DARL 25V 0.3A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
auf Bestellung 3562 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.77 EUR
17+ 1.53 EUR
100+ 1.06 EUR
500+ 0.89 EUR
1000+ 0.76 EUR
2500+ 0.67 EUR
Mindestbestellmenge: 15
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Technische Details 2N5306 TIN/LEAD Central Semiconductor Corp

Description: TRANS NPN DARL 25V 0.3A TO92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V, Frequency - Transition: 60MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 625 mW.

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2N5306 TIN/LEAD 2N5306 TIN/LEAD Hersteller : Central Semiconductor CSEM_S_A0010887413_1-2539469.pdf Bipolar Transistors - BJT NPN 25Vcbo 25Vceo 12Vebo 300mA 625mW
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