2N5306 TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor CorpDescription: TRANS NPN DARL 25V 0.3A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
auf Bestellung 3231 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.92 EUR |
| 15+ | 1.21 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.56 EUR |
| 2500+ | 0.49 EUR |
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Technische Details 2N5306 TIN/LEAD Central Semiconductor Corp
Description: TRANS NPN DARL 25V 0.3A TO92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V, Frequency - Transition: 60MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 625 mW.
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2N5306 TIN/LEAD | Hersteller : Central Semiconductor |
Bipolar Transistors - BJT NPN 25Vcbo 25Vceo 12Vebo 300mA 625mW |
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