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2N5320 TIN/LEAD

2N5320 TIN/LEAD Central Semiconductor


2n5320-5323.pdf Hersteller: Central Semiconductor
Trans GP BJT NPN 75V 2A 10000mW 3-Pin TO-39 Box
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Technische Details 2N5320 TIN/LEAD Central Semiconductor

Description: 75V 2A 10W TH TRANSISTOR-BIPOLAR, Packaging: Box, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 500µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V, Frequency - Transition: 50MHz, Supplier Device Package: TO-39, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 75 V, Power - Max: 10 W.

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2N5320 TIN/LEAD 2N5320 TIN/LEAD Hersteller : Central Semiconductor Corp Description: 75V 2A 10W TH TRANSISTOR-BIPOLAR
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V
Frequency - Transition: 50MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 10 W
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2N5320 TIN/LEAD 2N5320 TIN/LEAD Hersteller : Central Semiconductor 2N5320_5323-1652634.pdf Bipolar Transistors - BJT NPN 100Vcbo 100Vcev 75Vceo 6.0Vebo 10W
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