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2N5367 PBFREE

2N5367 PBFREE Central Semiconductor

Hersteller: Central Semiconductor
Bipolar Transistors - BJT PNP Vcbo 40V 40Vceo 4.0Vebo 300mA 625mW
auf Bestellung 1609 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.41 EUR
10+ 1.26 EUR
100+ 0.86 EUR
500+ 0.72 EUR
1000+ 0.61 EUR
2500+ 0.55 EUR
5000+ 0.51 EUR
Mindestbestellmenge: 2
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Technische Details 2N5367 PBFREE Central Semiconductor

Description: TRANS PNP 40V 0.3A TO92, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V, Frequency - Transition: 250MHz, Supplier Device Package: TO-92, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 625 mW.

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2N5367 PBFREE 2N5367 PBFREE Hersteller : Central Semiconductor Corp Description: TRANS PNP 40V 0.3A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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