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2N5401 APP PBFREE

2N5401 APP PBFREE Central Semiconductor


Hersteller: Central Semiconductor
Bipolar Transistors - BJT PNP 160Vcbo 150Vceo 5.0Vebo 600mA 625mW
auf Bestellung 4910 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.02 EUR
10+0.87 EUR
100+0.65 EUR
500+0.51 EUR
1000+0.41 EUR
2000+0.30 EUR
Mindestbestellmenge: 3
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Technische Details 2N5401 APP PBFREE Central Semiconductor

Description: 150V 600MA 625MW TH TRANSISTOR-S, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 625 mW.

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2N5401 APP PBFREE Hersteller : Central Semiconductor Corp Description: 150V 600MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
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