2N5401/RA NXP/Nexperia/We-En
Hersteller: NXP/Nexperia/We-En
Транзистор PNP (Uce=150V, Ic=0.3A, P=630mW, B=60-240@I=10mA, f>100MHz, -65 to +150C).... Група товару: Транзистори Корпус: TO-92 Од. вим: шт
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Technische Details 2N5401/RA NXP/Nexperia/We-En
Description: SMALL SIGNAL BIPOLAR TRANS PNP, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 625mW, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V, Frequency - Transition: 400MHz, Supplier Device Package: TO-92 (TO-226), Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 625 mW.
Weitere Produktangebote 2N5401/RA
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2N5401RA | Hersteller : Fairchild Semiconductor |
 Description: SMALL SIGNAL BIPOLAR TRANS PNPPackaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 625mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92 (TO-226) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |