Technische Details 2N5416S MOTOROLA
Description: TRANS PNP 300V 1A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Supplier Device Package: TO-39 (TO-205AD), Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 750 mW.
Weitere Produktangebote 2N5416S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| 2N5416S | Hersteller : Microsemi |
 Bipolar Transistors - BJT Power BJT |
auf Bestellung 53 Stücke: Lieferzeit 14-28 Tag (e) |
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2N5416S | Hersteller : Microchip Technology |
Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-39 Bag |
Produkt ist nicht verfügbar |
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2N5416S | Hersteller : Microchip Technology |
Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-39 Bag |
Produkt ist nicht verfügbar |
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2N5416S | Hersteller : Microchip Technology |
Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-39 Bag |
Produkt ist nicht verfügbar |
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2N5416S | Hersteller : Microchip Technology |
Description: TRANS PNP 300V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW |
Produkt ist nicht verfügbar |