2N5550 PBFREE

2N5550 PBFREE Central Semiconductor


Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN Gen Pur SS
auf Bestellung 6590 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.92 EUR
10+0.70 EUR
100+0.52 EUR
500+0.41 EUR
1000+0.32 EUR
2500+0.29 EUR
5000+0.27 EUR
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Technische Details 2N5550 PBFREE Central Semiconductor

Description: 140V 600MA 625MW TH TRANSISTOR-S, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 150mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V, Frequency - Transition: 100MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 140 V, Power - Max: 625 mW.

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2N5550 PBFREE 2N5550 PBFREE Hersteller : Central Semiconductor Corp Description: 140V 600MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
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