2N5550TAR onsemi
Hersteller: onsemiDescription: TRANS NPN 140V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 112000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.11 EUR |
| 4000+ | 0.095 EUR |
| 6000+ | 0.09 EUR |
| 10000+ | 0.083 EUR |
| 14000+ | 0.08 EUR |
| 20000+ | 0.076 EUR |
| 50000+ | 0.068 EUR |
| 100000+ | 0.063 EUR |
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Produktbewertung abgeben
Technische Details 2N5550TAR onsemi
Description: TRANS NPN 140V 0.6A TO-92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92-3, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 140 V, Power - Max: 625 mW.
Weitere Produktangebote 2N5550TAR nach Preis ab 0.09 EUR bis 0.48 EUR
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2N5550TAR | Hersteller : ON Semiconductor |
Trans GP BJT NPN 140V 0.6A 625mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 14000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5550TAR | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
auf Bestellung 5870 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TAR | Hersteller : onsemi |
Description: TRANS NPN 140V 0.6A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 85147 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TAR | Hersteller : ON Semiconductor |
Trans GP BJT NPN 140V 0.6A 625mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5550TAR | Hersteller : ON Semiconductor |
Trans GP BJT NPN 140V 0.6A 625mW 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
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2N5550TAR | Hersteller : ON Semiconductor |
Trans GP BJT NPN 140V 0.6A 625mW 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
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 |
2N5550TAR | Hersteller : ON Semiconductor |
Trans GP BJT NPN 140V 0.6A 625mW 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
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2N5550TAR | Hersteller : ON Semiconductor |
Trans GP BJT NPN 140V 0.6A 625mW 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
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| 2N5550TAR | Hersteller : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Case: TO92 Formed Mounting: THT Collector current: 0.6A Power dissipation: 0.625W Current gain: 50...200 Collector-emitter voltage: 140V Kind of package: Ammo Pack Frequency: 100MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |