2N5550TAR ON Semiconductor
| Anzahl | Preis |
|---|---|
| 2093+ | 0.069 EUR |
| 6000+ | 0.065 EUR |
| 10000+ | 0.063 EUR |
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Produktbewertung abgeben
Technische Details 2N5550TAR ON Semiconductor
Description: TRANS NPN 140V 0.6A TO-92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92-3, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 140 V, Power - Max: 625 mW.
Weitere Produktangebote 2N5550TAR nach Preis ab 0.096 EUR bis 0.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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2N5550TAR | onsemi |
 Description: TRANS NPN 140V 0.6A TO-92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 122000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TAR | onsemi |
Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
auf Bestellung 5756 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TAR | onsemi |
Description: TRANS NPN 140V 0.6A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 93928 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TAR | ON Semiconductor |
Trans GP BJT NPN 140V 0.6A 625mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2N5550TAR |
|
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: TRANS NPN 140V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 122000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.11 EUR |
| 4000+ | 0.096 EUR |
| 2N5550TAR |
|
Hersteller: onsemi
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
auf Bestellung 5756 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.51 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| 2000+ | 0.1 EUR |
| 2N5550TAR |
|
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: TRANS NPN 140V 0.6A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 93928 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 35+ | 0.51 EUR |
| 57+ | 0.31 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| 2N5550TAR |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 140V 0.6A 625mW 3-Pin TO-92 Fan-Fold
Trans GP BJT NPN 140V 0.6A 625mW 3-Pin TO-92 Fan-Fold
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)