2N5551 PBFREE Central Semiconductor
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.83 EUR |
| 10+ | 1.23 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.76 EUR |
| 2500+ | 0.64 EUR |
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Technische Details 2N5551 PBFREE Central Semiconductor
Description: 160V 600MA 625MW TH TRANSISTOR-S, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 150mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 625 mW.
Weitere Produktangebote 2N5551 PBFREE
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2N5551 PBFREE | Hersteller : Central Semiconductor |
 Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Box |
Produkt ist nicht verfügbar |
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2N5551 PBFREE | Hersteller : Central Semiconductor Corp |
Description: 160V 600MA 625MW TH TRANSISTOR-S Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |