Produkte > CENTRAL SEMICONDUCTOR > 2N5551 TIN/LEAD

2N5551 TIN/LEAD Central Semiconductor


2N5550_2N5551.PDF
Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN 180Vcbo 160Vceo 6.0Vebo 600mA 625mW
auf Bestellung 1198 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+3.14 EUR
10+1.98 EUR
100+1.32 EUR
500+1.09 EUR
1000+0.96 EUR
2500+0.87 EUR
5000+0.8 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 2N5551 TIN/LEAD Central Semiconductor

Description: TRANS NPN 160V 0.6A TO-92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92-3, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 625 mW.

Weitere Produktangebote 2N5551 TIN/LEAD nach Preis ab 1.34 EUR bis 3.2 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
2N5551 TIN/LEAD 2N5551 TIN/LEAD Central Semiconductor Corp 2N5550_2N5551.PDF Description: TRANS NPN 160V 0.6A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 174 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.2 EUR
11+2.02 EUR
100+1.34 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N5551 TIN/LEAD 2N5550_2N5551.PDF
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 160V 0.6A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 174 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.2 EUR
11+2.02 EUR
100+1.34 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH