2N5551,412

2N5551,412 NXP Semiconductors


2n5550_5551_4.pdf Hersteller: NXP Semiconductors
Trans GP BJT NPN 160V 0.3A 630mW 3-Pin TO-92 Bulk
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Technische Details 2N5551,412 NXP Semiconductors

Description: TRANS NPN 160V 0.3A TO92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 630 mW.

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2N5551,412 2N5551,412 Hersteller : NXP USA Inc. 2N5550_51_Series_Rev_Oct2004.pdf Description: TRANS NPN 160V 0.3A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 630 mW
Produkt ist nicht verfügbar