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2N5551G

2N5551G onsemi

2n5550-d.pdf Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 201370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3806+0.13 EUR
Mindestbestellmenge: 3806
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Produktbewertung abgeben

Technische Details 2N5551G onsemi

Description: TRANS NPN 160V 0.6A TO92, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92 (TO-226), Part Status: Obsolete, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 625 mW.

Weitere Produktangebote 2N5551G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2N5551G Hersteller : ON 2n5550-d.pdf
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
2N5551G Hersteller : ON 2n5550-d.pdf 05+06+
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
2N5551G Hersteller : ONSEMI ONSMS13513-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2N5551G - TRANSISTOR, NPN, 160V, 0.6A, TO92
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 201370 Stücke:
Lieferzeit 14-21 Tag (e)
2N5551G Hersteller : ON Semiconductor 2n5550-d.pdf Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Box
Produkt ist nicht verfügbar
2N5551G 2N5551G Hersteller : ON Semiconductor 2n5550-d.pdf Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Box
Produkt ist nicht verfügbar
2N5551G 2N5551G Hersteller : onsemi 2n5550-d.pdf Description: TRANS NPN 160V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N5551G 2N5551G Hersteller : onsemi 2N5551_D-1801438.pdf Bipolar Transistors - BJT 600mA 180V NPN
Produkt ist nicht verfügbar