2N5551TFR ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.11 EUR |
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Lieferzeit:
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Technische Details 2N5551TFR ON Semiconductor
Description: TRANS NPN 160V 0.6A TO-92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: TO-92-3, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 625 mW.
Weitere Produktangebote 2N5551TFR nach Preis ab 0.086 EUR bis 0.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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2N5551TFR | onsemi |
 Description: TRANS NPN 160V 0.6A TO-92-3Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 625 mW |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5551TFR | ON Semiconductor |
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551TFR | ON Semiconductor |
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551TFR | ON Semiconductor |
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R |
auf Bestellung 12974 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551TFR | onsemi |
Bipolar Transistors - BJT NPN Transistor General Purpose |
auf Bestellung 6075 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5551TFR | ON Semiconductor |
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R |
auf Bestellung 12974 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551TFR | onsemi |
Description: TRANS NPN 160V 0.6A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 625 mW |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5551TFR | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: reel; tape Frequency: 100MHz Current gain: 80...250 |
auf Bestellung 585 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2N5551TFR |
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Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Description: TRANS NPN 160V 0.6A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.12 EUR |
| 2N5551TFR |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 477+ | 0.37 EUR |
| 2N5551TFR |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 477+ | 0.37 EUR |
| 810+ | 0.21 EUR |
| 1240+ | 0.13 EUR |
| 1568+ | 0.1 EUR |
| 1777+ | 0.086 EUR |
| 2N5551TFR |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
auf Bestellung 12974 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 461+ | 0.38 EUR |
| 462+ | 0.37 EUR |
| 464+ | 0.36 EUR |
| 465+ | 0.35 EUR |
| 466+ | 0.33 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.3 EUR |
| 2N5551TFR |
|
Hersteller: onsemi
Bipolar Transistors - BJT NPN Transistor General Purpose
Bipolar Transistors - BJT NPN Transistor General Purpose
auf Bestellung 6075 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.54 EUR |
| 10+ | 0.32 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| 2000+ | 0.11 EUR |
| 2N5551TFR |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
auf Bestellung 12974 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 335+ | 0.54 EUR |
| 2N5551TFR |
|
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Description: TRANS NPN 160V 0.6A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 0.55 EUR |
| 63+ | 0.33 EUR |
| 102+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| 2N5551TFR |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Current gain: 80...250
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Current gain: 80...250
auf Bestellung 585 Stücke:
Lieferzeit 14-21 Tag (e)