2N5551TFR ON Semiconductor
auf Bestellung 14000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2062+ | 0.069 EUR |
| 6000+ | 0.062 EUR |
| 10000+ | 0.059 EUR |
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Technische Details 2N5551TFR ON Semiconductor
Description: TRANS NPN 160V 0.6A TO-92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: TO-92-3, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 625 mW.
Weitere Produktangebote 2N5551TFR nach Preis ab 0.065 EUR bis 0.44 EUR
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2N5551TFR | Hersteller : onsemi |
 Description: TRANS NPN 160V 0.6A TO-92-3Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 625 mW |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5551TFR | Hersteller : ON Semiconductor |
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551TFR | Hersteller : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 80...250 Mounting: THT Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 1483 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551TFR | Hersteller : ON Semiconductor |
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551TFR | Hersteller : ON Semiconductor |
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R |
auf Bestellung 14974 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551TFR | Hersteller : ON Semiconductor |
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R |
auf Bestellung 14974 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551TFR | Hersteller : onsemi |
Bipolar Transistors - BJT NPN Transistor General Purpose |
auf Bestellung 6562 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5551TFR | Hersteller : onsemi |
Description: TRANS NPN 160V 0.6A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 625 mW |
auf Bestellung 5388 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5551TFR | Hersteller : ON Semiconductor |
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |