Technische Details 2N5657G ON Semiconductor
Description: TRANS NPN 350V 0.5A TO126, Power - Max: 20 W, Voltage - Collector Emitter Breakdown (Max): 350 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Obsolete, Supplier Device Package: TO-126, Frequency - Transition: 10MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10V, Current - Collector Cutoff (Max): 100µA, Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Packaging: Bulk.
Weitere Produktangebote 2N5657G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2N5657G | onsemi |
 Description: TRANS NPN 350V 0.5A TO126Power - Max: 20 W Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: TO-126 Frequency - Transition: 10MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
2N5657G | onsemi |
Bipolar Transistors - BJT 1A 250V 20W NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N5657G |
|
Hersteller: onsemi
Description: TRANS NPN 350V 0.5A TO126
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-126
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS NPN 350V 0.5A TO126
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-126
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5657G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 1A 250V 20W NPN
Bipolar Transistors - BJT 1A 250V 20W NPN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH