2N5657G ON Semiconductor
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Technische Details 2N5657G ON Semiconductor
Description: TRANS NPN 350V 0.5A TO126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10V, Frequency - Transition: 10MHz, Supplier Device Package: TO-126, Part Status: Obsolete, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 20 W.
Weitere Produktangebote 2N5657G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| 2N5657G | Hersteller : ONSEMI |
 Description: ONSEMI - 2N5657G - TRANSISTOR, BIPOL, NPN, 350V, TO-225-3tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 5182 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5657G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 350V 0.5A 20000mW 3-Pin(3+Tab) TO-225 Box |
Produkt ist nicht verfügbar |
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2N5657G | Hersteller : onsemi |
Description: TRANS NPN 350V 0.5A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10V Frequency - Transition: 10MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 20 W |
Produkt ist nicht verfügbar |
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2N5657G | Hersteller : onsemi |
Bipolar Transistors - BJT 1A 250V 20W NPN |
Produkt ist nicht verfügbar |