Technische Details 2N5660 MOT
Description: TRANS NPN 200V 2A TO66, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A, Current - Collector Cutoff (Max): 200nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V, Supplier Device Package: TO-66 (TO-213AA), Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 200 V, Power - Max: 2 W.
Weitere Produktangebote 2N5660
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| 2N5660 | Hersteller : MOTOROLA |
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auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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| 2N5660 | Hersteller : Microchip Technology |
Description: TRANS NPN 200V 2A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V Supplier Device Package: TO-66 (TO-213AA) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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| 2N5660 | Hersteller : Microchip Technology |
Bipolar Transistors - BJT 200V 2A 2W NPN Power BJT THT |
Produkt ist nicht verfügbar |