2N5667S Microchip Technology
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Technische Details 2N5667S Microchip Technology
Description: TRANS NPN 300V 5A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A, Current - Collector Cutoff (Max): 200nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V, Supplier Device Package: TO-39 (TO-205AD), Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 1.2 W.
Weitere Produktangebote 2N5667S
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2N5667S | Hersteller : Microchip Technology |
 Trans GP BJT NPN 300V 5A 1200mW 3-Pin TO-39 Bag |
Produkt ist nicht verfügbar |
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2N5667S | Hersteller : Microchip Technology |
Trans GP BJT NPN 300V 5A 1200mW 3-Pin TO-39 Bag |
Produkt ist nicht verfügbar |
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2N5667S | Hersteller : Microchip Technology |
Description: TRANS NPN 300V 5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1.2 W |
Produkt ist nicht verfügbar |