2N5770 APM TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 15V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Gain: 15dB
Power - Max: 625mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 1V
Frequency - Transition: 900MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Supplier Device Package: TO-92-3
Description: 15V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Gain: 15dB
Power - Max: 625mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 1V
Frequency - Transition: 900MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Supplier Device Package: TO-92-3
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Technische Details 2N5770 APM TIN/LEAD Central Semiconductor Corp
Description: 15V 50MA 625MW TH TRANSISTOR-SMA, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Gain: 15dB, Power - Max: 625mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 1V, Frequency - Transition: 900MHz, Noise Figure (dB Typ @ f): 6dB @ 60MHz, Supplier Device Package: TO-92-3.
Weitere Produktangebote 2N5770 APM TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 2N5770 APM TIN/LEAD | Hersteller : Central Semiconductor | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator |
Produkt ist nicht verfügbar |