2N5770 TRE TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 15V 50MA 625MW TH TRANSISTOR-SMA
Supplier Device Package: TO-92
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Frequency - Transition: 900MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 1V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 50mA
Power - Max: 625mW
Gain: 15dB
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
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Technische Details 2N5770 TRE TIN/LEAD Central Semiconductor Corp
Description: 15V 50MA 625MW TH TRANSISTOR-SMA, Supplier Device Package: TO-92, Noise Figure (dB Typ @ f): 6dB @ 60MHz, Frequency - Transition: 900MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 1V, Voltage - Collector Emitter Breakdown (Max): 15V, Current - Collector (Ic) (Max): 50mA, Power - Max: 625mW, Gain: 15dB, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2N5770 TRE TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| 2N5770 TRE TIN/LEAD | Central Semiconductor | Bipolar Transistors - BJT 15V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N5770 TRE TIN/LEAD |
Hersteller: Central Semiconductor
Bipolar Transistors - BJT 15V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator
Bipolar Transistors - BJT 15V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH