2N5818 TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 40V 750MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 750mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 135MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 40V 750MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 750mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 135MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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Technische Details 2N5818 TIN/LEAD Central Semiconductor Corp
Description: 40V 750MA 625MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 750mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V, Frequency - Transition: 135MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 750 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 625 mW.
Weitere Produktangebote 2N5818 TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2N5818 TIN/LEAD | Hersteller : Central Semiconductor |
 Bipolar Transistors - BJT NPN 50Vcbo 50Vces 40Vceo 5.0Vebo 625mW |
Produkt ist nicht verfügbar |