2N5823 TRE TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 60V 750MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 750 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
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Technische Details 2N5823 TRE TIN/LEAD Central Semiconductor Corp
Description: 60V 750MA 625MW TH TRANSISTOR-SM, Power - Max: 1.5 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 750 mA, Supplier Device Package: TO-92-3, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Tape & Reel (TR).
Weitere Produktangebote 2N5823 TRE TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| 2N5823 TRE TIN/LEAD | Central Semiconductor |
Bipolar Transistors - BJT 60V,750mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High Current |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N5823 TRE TIN/LEAD |
|
Hersteller: Central Semiconductor
Bipolar Transistors - BJT 60V,750mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High Current
Bipolar Transistors - BJT 60V,750mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High Current
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH