2N6297 PBFREE Central Semiconductor
Hersteller: Central Semiconductor
Bipolar Transistors - BJT 4A,80V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
| Anzahl | Privatkunde |
|---|---|
| 1+ | 33.3 EUR |
| 10+ | 21.17 EUR |
| 120+ | 21.11 EUR |
| 510+ | 21.09 EUR |
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Technische Details 2N6297 PBFREE Central Semiconductor
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW, Power - Max: 50 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP - Darlington, Mounting Type: Through Hole, Package / Case: TO-213AA, TO-66-2, Packaging: Tube, Current - Collector (Ic) (Max): 4 A, Supplier Device Package: TO-66, Frequency - Transition: 4MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V, Current - Collector Cutoff (Max): 500µA, Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A.
Weitere Produktangebote 2N6297 PBFREE
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| 2N6297 PBFREE | Central Semiconductor Corp |
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 80 V Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Packaging: Tube Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-66 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N6297 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Tube
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-66
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Tube
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-66
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
Im Einkaufswagen
Stück im Wert von UAH