Technische Details 2N6297 TIN/LEAD Central Semiconductor
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW, Power - Max: 50 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 4 A, Supplier Device Package: TO-66, Frequency - Transition: 4MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V, Current - Collector Cutoff (Max): 500µA, Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP - Darlington, Mounting Type: Through Hole, Package / Case: TO-213AA, TO-66-2, Packaging: Tube.
Weitere Produktangebote 2N6297 TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| 2N6297 TIN/LEAD | Central Semiconductor Corp |
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-66 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 60 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
2N6297 TIN/LEAD | Central Semiconductor |
 Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0Vebo 5.0A 50W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 60 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N6297 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-66
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Tube
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-66
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 60 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N6297 TIN/LEAD |
|
Hersteller: Central Semiconductor
Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0Vebo 5.0A 50W
Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0Vebo 5.0A 50W
Produkt ist nicht verfügbar
Mindestbestellmenge: 60 Stücke
Im Einkaufswagen
Stück im Wert von UAH