2N6387 ON Semiconductor
auf Bestellung 1679 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 273+ | 1.99 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N6387 ON Semiconductor
Description: TRANS NPN DARL 60V 10A TO-220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V, Supplier Device Package: TO-220AB, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 2 W.
Weitere Produktangebote 2N6387 nach Preis ab 2.06 EUR bis 2.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2N6387 | Hersteller : Harris Corporation |
Description: TRANS NPN DARL 60V 10A TO-220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
auf Bestellung 2368 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6387 | Hersteller : onsemi |
Description: TRANS NPN DARL 60V 10A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
auf Bestellung 1107 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N6387 | Hersteller : MOTOROLA |
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auf Bestellung 1200 Stücke: Lieferzeit 21-28 Tag (e) |
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| 2N6387 | Hersteller : ONSEMI |
Description: ONSEMI - 2N6387 - 2N6387, SINGLE BIPOLAR TRANSISTORStariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 572 Stücke: Lieferzeit 14-21 Tag (e) |
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2N6387 | Hersteller : onsemi |
Description: TRANS NPN DARL 60V 10A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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2N6387 | Hersteller : onsemi |
Bipolar Transistors - BJT 10A 60V Bipolar |
Produkt ist nicht verfügbar |
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2N6387 | Hersteller : STMicroelectronics |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |



