2N6517 TRE PBFREE Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 350V 500MA 625MW TH TRANSISTOR-S
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N6517 TRE PBFREE Central Semiconductor Corp
Description: 350V 500MA 625MW TH TRANSISTOR-S, Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 350 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: TO-92-3, Frequency - Transition: 40MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Tape & Reel (TR).
Weitere Produktangebote 2N6517 TRE PBFREE
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| 2N6517 TRE PBFREE | Central Semiconductor | Bipolar Transistors - BJT 350V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N6517 TRE PBFREE |
Hersteller: Central Semiconductor
Bipolar Transistors - BJT 350V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
Bipolar Transistors - BJT 350V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH