Technische Details 2N6517G On Semiconductor
Description: TRANS NPN 350V 0.5A TO92, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: TO-92 (TO-226), Part Status: Obsolete, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 625 mW.
Weitere Produktangebote 2N6517G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2N6517G | Hersteller : onsemi |
 Description: TRANS NPN 350V 0.5A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N6517G | Hersteller : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 350V; 500mA; 625mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 0.5A Case: TO92 Mounting: THT Power: 625mW |
Produkt ist nicht verfügbar |