Technische Details 2N6517G On Semiconductor
Description: TRANS NPN 350V 0.5A TO92, Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 350 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Obsolete, Supplier Device Package: TO-92 (TO-226), Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body, Packaging: Bulk.
Weitere Produktangebote 2N6517G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2N6517G | Hersteller : onsemi |
 Description: TRANS NPN 350V 0.5A TO92Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
Produkt ist nicht verfügbar |
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2N6517G | Hersteller : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 350V; 500mA; 625mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 0.5A Case: TO92 Mounting: THT Power: 625mW |
Produkt ist nicht verfügbar |