2N6551 PBFREE

2N6551 PBFREE Central Semiconductor


2N6551_6556-3193870.pdf Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN 120Vcbo 60Vceo 6.0Vebo
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Lieferzeit 10-14 Tag (e)
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1+7.53 EUR
10+6.71 EUR
25+6.42 EUR
100+5.88 EUR
500+4.98 EUR
1000+4.96 EUR
2500+4.82 EUR
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Technische Details 2N6551 PBFREE Central Semiconductor

Description: 60V 1A 2W TH TRANSISTOR-BIPOLAR, Packaging: Tube, Package / Case: TO-202 Long Tab, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 1V, Frequency - Transition: 75MHz, Supplier Device Package: TO-202, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 10 W.

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2N6551 PBFREE Hersteller : Central Semiconductor Corp Description: 60V 1A 2W TH TRANSISTOR-BIPOLAR
Packaging: Tube
Package / Case: TO-202 Long Tab
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 1V
Frequency - Transition: 75MHz
Supplier Device Package: TO-202
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 10 W
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